advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v good thermal performance r ds(on) 24m fast switching performance i d 9a p-ch bv dss -30v r ds(on) 36m description i d -8a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 continuous drain current 3 9 -8 a i d @t a =70 continuous drain current 3 7.2 -6.4 a i dm pulsed drain current 1 50 -50 a p d @t a =25 total power dissipation 3.1 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-c maximum thermal resistance, junction-case 8 /w rthj-a maximum thermal resistance, junction-ambient 3 40 /w data and specifications subject to change without notice 200902103 parameter 1 thermal data AP4506GEH rohs-compliant product a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. s1 to-252-4l g1 s2 g2 d1/d2 s1 g1 d1 s2 g2 d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 24 m ? ?
p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 36 m ? ?
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 4 AP4506GEH 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 10 20 30 40 50 0246 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 18 20 22 24 26 28 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =4a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 5 AP4506GEH q v g 4.5v q gs q gd q g charge 0 4 8 12 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =24v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90%
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 6 AP4506GEH 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 25 29 33 37 41 45 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-3a t c =25 o c 0 10 20 30 40 50 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-5a v g =-10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v)
AP4506GEH p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 0 2 4 6 8 10 12 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -24v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthja=75 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc q v g -4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
|
